Pay in 4 interest-free payments of $31.25 Learn more
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Aug 30 - Sep 4
Pay in 4 interest-free payments of $31.25 Learn more
Ships within 48 hours · Estimated delivery Aug 30 - Sep 4
256GB: 1080MB/s *
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 16-chip 1024M x8 Pieces in Kit 1 Compatibility
CT8G4RFS4213 Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
M391B5273DH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
M378B5273DH0-CK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1
Hynix 8GB (1x 8GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2400-ecc-sodimm-16gb-1x-dr-fm 256GB: 1080MB/s *Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1600 MT s 240 pin EUDIMM RAM module from Hynix . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is