Samsung 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr3l-1333-rdimm-16gb-1x HMA41GR7AFR8N-TF Capacity 8GB (1x 8GB)

HMA41GR7AFR8N-TF Capacity 8GB (1x 8GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

2xHMAA8GL7MMR4N-UH Capacity 128GB (2x 64GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Single rank Configuration x8 Pieces in Kit 2 Compatibility

HMT451U6BFR8C-PB Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

This 1GB (1x 1GB) DDR2 800 MT/s Dual rank

Samsung 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr3l-1333-rdimm-16gb-1x HMA41GR7AFR8N-TF Capacity 8GB (1x 8GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1600 MT s 240 pin EUDIMM RAM module from Samsung . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and