Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2666-ecc-sodimm-32gb-2x-dr-fm M393B1K70CH0-CH9 Capacity 8GB (1x 8GB)

M393B1K70CH0-CH9 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

Band Size:

2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility

Why is the speed of this RAM module shown as 333 MT/s instead of 333 Mhz

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (2x 2GB) DDR3 1066 MT/s 240-pin EUDIMM RAM kit from Hynix

Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2666-ecc-sodimm-32gb-2x-dr-fm M393B1K70CH0-CH9 Capacity 8GB (1x 8GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1600 MT s 240 pin EUDIMM RAM module from Hynix . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is