Pay in 4 interest-free payments of $58.75 Learn more
Shipping Estimate
USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Aug 30 - Sep 4
Pay in 4 interest-free payments of $58.75 Learn more
Ships within 48 hours · Estimated delivery Aug 30 - Sep 4
M393B5170FH0-CH9Q5 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
2xM386A8K40BMB-CPB Capacity 128GB (2x 64GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
M391B5273CH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
2xM471B1G73DB0-YK0 Capacity 16GB (2x 8GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL13 Configuration x8 Pieces in Kit 1
Hynix 32GB (1x 32GB) DDR4-2133 PC4-17000 1.2V DR x4 ECC Registered 288-pin RDIMM RAM Module Classification_ram-ddr-266-rdimm-2gb-2x-dr M393B5170FH0-CH9Q5 Capacity 4GB (1x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR4 2133 MT s 288 pin RDIMM RAM module from Hynix . This Dual rank, x4 configuration RAM module is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V and is designed
US$ 100.00
US$ 30.00
US$ 18.00
US$ 16.00
US$ 30.00
US$ 22.00
US$ 18.00
US$ 23.00
US$ 132.00
US$ 118.00
US$ 36.00