Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm M312L5720BG0-CB3 Capacity 2GB (1x 2GB)

M312L5720BG0-CB3 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR-333 - 333MT/s - PC2700 Voltage 2

M378B5673EH1-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

M471B1G73QH0-YK0 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

x8 configuration RAM kit from Kingston is for use in DDR2 compatible systems and operates at 533 MT/s with an overall transfer rate of PC2-4200

8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration 36-chip 256Mx4 Pieces in Kit 1 Compatibility

Samsung 1GB (1x 1GB) CL2 DDR-266 PC2100 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Module Classification_ram-ddr3-1066-sodimm-8gb-1x-dr-fm M312L5720BG0-CB3 Capacity 2GB (1x 2GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT s 184 pin RDIMM RAM module from Samsung . This Dual rank, x4 configuration RAM module is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM module also operates at a standard voltage of 2. 5V with a CAS Latency of